دیتاشیت IRFB4229PBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRFB4229PBF
|
| حجم فایل |
105.042
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRFB4229PBF
-
Operating Temperature:
-40°C~+175°C@(Tj)
-
Power Dissipation (Pd):
330W
-
Total Gate Charge (Qg@Vgs):
110nC@10V
-
Drain Source Voltage (Vdss):
250V
-
Input Capacitance (Ciss@Vds):
4560pF@25V
-
Continuous Drain Current (Id):
46A
-
Gate Threshold Voltage (Vgs(th)@Id):
5V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
46mΩ@10V,26A
-
Package:
TO-220
-
Manufacturer:
Infineon Technologies
